Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain

Anisotropic metal-insulator transition in epitaxial thin films.

By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also expe...

Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots.

In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to grea...

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

deposited epitaxial VO2 thin films Deyi Fu, Kai Liu, Tao Tao, Kelvin Lo, Chun Cheng, Bin Liu, Rong Zhang, Hans A. Bechtel, and Junqiao Wu Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanji...

Metal-to-insulator transition in sputter deposited 3NiÕAl thin films

Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

Transport characteristics of ultrathin SrRuO3 films, deposited epitaxially on TiO2-terminated SrTiO3 (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature condu...